BUK951R6-30E datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
О ДАТАШИТЕ
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МаркировкаBUK951R6-30E
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ПроизводительNXP Semiconductors
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ОписаниеNXP Semiconductors BUK951R6-30E Mfr Package Description: PLASTIC, SC-46, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Finish: TIN Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 120 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 1405 mJ Drain-source On Resistance-Max: 0.0016 ohm Pulsed Drain Current-Max (IDM): 1400 A
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Количество страниц13 шт.
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Форматы файлаHTML, PDF
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